Reliable Nonvolatile Memories: Techniques and Measures
نویسندگان
چکیده
منابع مشابه
The Future of Nonvolatile Memories
Driven by an increasing demand for mobile devices, the market for nonvolatile memories is rapidly growing [1]. Today all nonvolatile memories are based on charge storage and are fabricated by materials available in CMOS processes. These devices have some general shortcomings like slow programming (from microseconds up to milliseconds), limited endurance (typically 10 – 10 write/erase cycles) as...
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This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code. When reading information from a block, it adjusts the reading threshold such that the resulting word is also balanced or approximately balanced. Balanced modulation h...
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In this paper, the memory characteristics of two kinds of metal-oxide-semiconductor (MOS) capacitors embedded with Au nanocrytals are investigated: hybrid MOS with nanocrystals (NCs) fabricated by chemical syntheses and rapid thermal annealing (RTA) MOS with NCs fabricated by RTA. For both kinds of devices, the capacitance versus voltage (C–V ) curves clearly indicate the charge storage in the ...
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This paper investigates the use of Fowler–Nordheim tunneling for Flash memories programming looking for a good tradeoff between applied voltage (to relax requirements for on-chip circuitry), program time and oxide stress-induced leakage current (SILC) degradation. Exploiting the results of a recent study of trap dynamics under pulsed tunnel conditions, it is shown that by means of a small numbe...
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Introduction Semiconductor memory market has been driven by DRAM. However non-volatile memory market, Flash memory as a representative, is growing remarkably because of its versatile application market such as cellular phone, PC memory card, silicon audio, digital still camera storage, automobile application with MCU and so forth. In terms of testing, it is quite different from DRAM. This will ...
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ژورنال
عنوان ژورنال: IEEE Design & Test
سال: 2017
ISSN: 2168-2356,2168-2364
DOI: 10.1109/mdat.2017.2682252